The Effects of Piezoelectricity Matrix Constants on the Charge of a Thin Membrane

Tomáš Kováč; František Horvát; Branislav Hučko; Roland Jančo; Miloš Musil

doi:10.1515/scjme-2017-0018

.blurhash-client-img { display: none !important; }

The Effects of Piezoelectricity Matrix Constants on the Charge of a Thin Membrane

Strojnícky časopis - Journal of Mechanical Engineering

Volume 67 (2017): Issue 2 (November 2017)

By: Tomáš Kováč, František Horvát, Branislav Hučko, Roland Jančo and Miloš Musil

Open Access

|Nov 2017

Abstract

This article is devoted to the comparison of the influence of the piezoelectric matrix properties on the magnitude of the resulting charge when a thin piezoelectric membrane of circular cross section, made from aluminium gallium nitride (Al-GaN), is loaded. The size of change of the electric charge was determined by the numerical analysis and the by the change of the properties of the piezoelectric matrix. The matrix constants were obtained from various sources introduced in world databases.

References

[1] M. Kermani, M. Moallem, R. Patel. Applied Vibration Suppresion Using Piezoelectric Materials, New York: Nova Science Publishers, Inc., 2008, ISBN-13: 978-1-60021-896-5, 176 p.
Search in Google Scholar Back to article
[2] J. Erhart. Základy piezoelektřiny pro aplikace, Brno: Ústav automatizace a měřici techniky VUT v Brne, 2011. URL: http://www.crr.vutbr.cz/system/files/brozura_06_1112.pdf
Search in Google Scholar Back to article
[3] Ansys Polyflow User’s Guide, https://www.sharcnet.ca/Software/Ansys/16.2.3/en-us/help/poly_pf/poly_pf.html
Search in Google Scholar Back to article
[4] A. Erturk, D. J. Inman. Piezoelectric energy harvesting. First edition. Wiley Publication, 2011, 402 p., ISBN: 978-0-470-68254-8.
Search in Google Scholar Back to article
[5] K. Tsubouchi, N. Mikoshiba. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films. IEEE Trans. Sonics Ultrason. 1985 (32), No. 5, 634 – 644.
Search in Google Scholar Back to article
[6] F. Bernardini, V. Fiorentini, D. Vanderbilt. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B 1997 (56), No. 15-16, R10024(R)
Search in Google Scholar Back to article
[7] F. Bernardini, V. Fiorentini. First-principles calculation of the piezoelectric tensor d/sup to or from / of III-V nitrides. Appl. Phys. Lett. 2002 (80), 4145 - 4147
Search in Google Scholar Back to article
[8] I. L. Guy, S. Muensit, E. M. Goldys. Extensional piezoelectric coefficients of gallium nitride and aluminum nitride. Appl. Phys. Lett. 1999 (75), 4133 - 4135
Search in Google Scholar Back to article
[9] G. Bu, D. Ciplys, M. Shur, L.J. Schowalter, S. Schujman, R. Gaska, Surface acoustic waves in single crystal bulk aluminum nitride, Appl. Phys. Lett. submitted 2003.
Search in Google Scholar Back to article
[10] M. Edwards. Material for Robus Gallium Nitride. Additional Report. Remperature Dependent Properties of GaN. University of Bath, 2009, 1 – 7. URL: http://www.morganproject.eu/documents_public/Temp-Dependent%20Properties%20of%20GaN%20&%20Related%20Materials.pdf.
Search in Google Scholar Back to article
[11] A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan, Appl. Phys. Lett. 1996 (68), 818.
Search in Google Scholar Back to article
[12] G. D. O’Clock, M. T. Duffy. Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire. Appl. Phys. Lett. 1973 (23), No. 2, 55.
Search in Google Scholar Back to article
[13] C. Bowen, D. Allsopp, R. Stevens, P. Shields, W. Wang. Modelling and designing GaN piezeoelectric MEMS. In: Second International Conference on Multi-Material Micro Manufacture, Grenoble. 2006.
Search in Google Scholar Back to article
[14] J.C. Freeman. Basic Equations for the Modeling of Gallium Nitride (GaN) High Electron Mobility Transistors. 2003, NASA/TM-2003-211983.
Search in Google Scholar Back to article
[15] P. Staňák, J. Sládek, V. Sládek. Analysis of piezoelectric semiconducting solids by meshless method, Journal of Mechanical Engineering - Strojnícky časopis 2015 (65), No. 1, 77 – 92.
Search in Google Scholar Back to article
[16] T. Kováč, F. Horvát, M. Čekan, B. Hučko, M. Szarvas, J. Dzuba, G. Vanko. Numerical solution of aluminum galium nitride membrane in finite element analysis. 15^th Conference on Applied Mathematics APLIMAT 2016 Proceedings, Bratislava 2016, 2016, 700 - 710.
Search in Google Scholar Back to article
[17] J. Dzuba, G. Vanko, O. Babchenko, T. Lalinský, F. Horvát, M. Szarvas, T. Kováč, B. Hučko. Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane. ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems, art. no. 7805936, 2017, 227 - 230.
Search in Google Scholar Back to article

Articles in this issue

DOI: https://doi.org/10.1515/scjme-2017-0018 | Journal eISSN: 2450-5471 | Journal ISSN: 0039-2472

Journal RSS Feed

Language: English

Page range: 61 - 68

Published on: Nov 18, 2017

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

Publication frequency: 2 issues per year

Keywords:

piezoelectric,

gallium nitride,

constitutive equations,

average,

variance,

deviation

Related subjects:

Engineering,

Mechanical engineering,

Fundamentals of mechanical engineering,

Mechanics

© 2017 Tomáš Kováč, František Horvát, Branislav Hučko, Roland Jančo, Miloš Musil, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 67 (2017): Issue 2 (November 2017)