Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst

Umber Kalsoom; M. Shahid Rafique; Shamaila Shahzadi; Khizra Fatima; Rabia ShaheeN

doi:10.1515/msp-2017-0099

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Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst

Materials Science-Poland

Volume 35 (2017): Issue 4 (December 2017)

By: Umber Kalsoom, M. Shahid Rafique, Shamaila Shahzadi, Khizra Fatima and Rabia ShaheeN

Open Access

|Mar 2018

Abstract

The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 °C. Raman spectroscopy of the grown films revealed that the growth of low defect tri-layer graphene depended upon Ni content and uniformity of the Ni film. The line profile analysis of the AFM micrographs of the films also confirmed the formation of bi- tri- and a few-layer graphene. The deposited uniform Ni film matrix and carbon/Ni thickness ratio are the controlling factors for the growth of bitri- or few- layer graphene using pulsed laser deposition technique.

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Articles in this issue

DOI: https://doi.org/10.1515/msp-2017-0099 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 687 - 693

Submitted on: Jan 24, 2016

Accepted on: Nov 18, 2017

Published on: Mar 20, 2018

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

graphene,

Raman spectroscopy,

atomic force microscopy,

pulsed laser deposition

Related subjects:

Materials sciences,

Materials sciences, other,

Nanomaterials,

Functional and smart materials,

Materials characterization and properties

© 2018 Umber Kalsoom, M. Shahid Rafique, Shamaila Shahzadi, Khizra Fatima, Rabia ShaheeN, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 35 (2017): Issue 4 (December 2017)