Nyquist diagrams of the original expanded GaSe matrix (1), and nanostructure of GaSe ‹his›(2) with the respective equivalent circuit diagrams [10]. Equivalent circuit diagrams are shown in the insets (a) and (b) on the righthand side of the figure.
Table 1
Parameters of the model (a).
| Element | BCPE1 | BCPE2 | R | CPE |
|---|---|---|---|---|
| of the model | [Ω] | [Ω] | [Ω] | [F] |
| Value | 2.15E8 | 1.01E8 | 1.73E8 | 4.47E-12 |
Table 2
Parameters of the model (b).
| Element | R1 | CPE1 | R2 | CPE2 | R3 | CPE3 | L | R4 | CPE4 |
|---|---|---|---|---|---|---|---|---|---|
| of the model | [Ω] | [F] | [Ω] | [F] | [Ω] | [F] | [H] | [Ω] | [F] |
| Value | 6.57E7 | 2.93E-14 | 2.96E8 | 4.79E-12 | 8.77E8 | 1.73E-8 | 4.63E3 | 3.04E9 | 1.17E-10 |
Pulse generation in bio/nonorganic N-barrier GaSe ‹his› nanostructure
Nyquist diagrams (a) and CVC (b), measured perpendicular to the nanolayers of GaSe ‹his + H2O› (1) and GaSe ‹his + H2O + KOH› (2). Galvanostatic charge-discharge cycles of GaSe ‹his + H2O + KOH› at the current of 1 µA (3) and 10 µA (4) are shown in the inset.
Nyquist diagrams (a) and CVC (b), measured along the nanolayers of GaSe ‹his + H2O› (1) and GaSe ‹his + H2O + KOH› (2).
Nyquist diagrams of the original expanded GaSe matrix (1) and GaSe ‹his› nanostructure (2).
Nyquist diagrams (a) and CVC (b), measured perpendicular to the nanolayers of InSe ‹his + H2O› (1) and InSe ‹his + H2O + KOH› (2). Galvanostatic charge-discharge cycle at 1 µA current (top left corner), tangent of loss angle and dielectric constant (bottom right corner) of InSe ‹his + H2O + KOH› are shown in the insets to Fig. 6b.
Nyquist diagrams (a) and CVC (b), measured along the nanolayers for InSe ‹his + H2O› (1) and InSe ‹his + H2O + KOH› (2).