



Compositions of as-prepared bulk InxSb20−xAg10Se70 (0 ⩽ x ⩽ 15) chalcogenide alloys obtained by using EDS spectroscopy_
| x | at.% | |||
|---|---|---|---|---|
| Se | Sb | Ag | In | |
| 0 | 72.66 | 18.04 | 9.30 | 0.00 |
| 5 | 72.10 | 13.75 | 9.56 | 4.59 |
| 10 | 72.42 | 9.85 | 8.95 | 8.77 |
| 15 | 74.70 | 4.53 | 8.57 | 12.20 |
Optical band gap (Eg) and tailing parameter (B−1) of the as-prepared InxSb20−xAg10Se70 chalcogenide alloys_
| Composition | Eg | B−1 |
|---|---|---|
| (x) | [eV] | [× 10−4 cm−1 ⋅eV−1] |
| 0 | 1.59 | 137.5 |
| 5 | 1.30 | 138.7 |
| 10 | 1.71 | 69.4 |
| 15 | 2.06 | 54.1 |