Pressure dependence of E+ and E− for the dilute nitride GaNxAs1−x. The experimental data are from the literature [11].
Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x
By: Chuan-Zhen Zhao, Tong Wei, Xiao-Dong Sun, Sha-Sha Wang and Ke-Qing Lu
DOI: https://doi.org/10.1515/msp-2016-0110 | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331
Language: English
Page range: 881 - 885
Submitted on: May 4, 2016
Accepted on: Sep 25, 2016
Published on: Dec 17, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
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© 2016 Chuan-Zhen Zhao, Tong Wei, Xiao-Dong Sun, Sha-Sha Wang, Ke-Qing Lu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.