![Pressure dependence of E+ and E− for the dilute nitride GaNxAs1−x. The experimental data are from the literature [11].](https://sciendo-parsed.s3.eu-central-1.amazonaws.com/647250b8215d2f6c89dc3e1a/j_msp-2016-0110_fig_001.jpg?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Content-Sha256=UNSIGNED-PAYLOAD&X-Amz-Credential=AKIA6AP2G7AKOUXAVR44%2F20251204%2Feu-central-1%2Fs3%2Faws4_request&X-Amz-Date=20251204T131703Z&X-Amz-Expires=3600&X-Amz-Signature=99bc36cbd51c927276e4629265095f5b26072ac7ff8fb69788849543a0b9780d&X-Amz-SignedHeaders=host&x-amz-checksum-mode=ENABLED&x-id=GetObject)
Figures & Tables
![Pressure dependence of E+ and E− for the dilute nitride GaNxAs1−x. The experimental data are from the literature [11].](https://sciendo-parsed.s3.eu-central-1.amazonaws.com/647250b8215d2f6c89dc3e1a/j_msp-2016-0110_fig_001.jpg?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Content-Sha256=UNSIGNED-PAYLOAD&X-Amz-Credential=AKIA6AP2G7AKOUXAVR44%2F20251204%2Feu-central-1%2Fs3%2Faws4_request&X-Amz-Date=20251204T131703Z&X-Amz-Expires=3600&X-Amz-Signature=99bc36cbd51c927276e4629265095f5b26072ac7ff8fb69788849543a0b9780d&X-Amz-SignedHeaders=host&x-amz-checksum-mode=ENABLED&x-id=GetObject)
![Pressure dependence of E+ and E− for the dilute nitride GaNxAs1−x. The experimental data are from the literature [11].](https://sciendo-parsed.s3.eu-central-1.amazonaws.com/647250b8215d2f6c89dc3e1a/j_msp-2016-0110_fig_001.jpg?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Content-Sha256=UNSIGNED-PAYLOAD&X-Amz-Credential=AKIA6AP2G7AKOUXAVR44%2F20251204%2Feu-central-1%2Fs3%2Faws4_request&X-Amz-Date=20251204T131703Z&X-Amz-Expires=3600&X-Amz-Signature=99bc36cbd51c927276e4629265095f5b26072ac7ff8fb69788849543a0b9780d&X-Amz-SignedHeaders=host&x-amz-checksum-mode=ENABLED&x-id=GetObject)
© 2016 Chuan-Zhen Zhao, Tong Wei, Xiao-Dong Sun, Sha-Sha Wang, Ke-Qing Lu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.