Abstract
The present work describes the deposition of semiconducting Cu2SnSe3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu2SnSe3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 цш and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω-cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu2SnSe3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.