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Titanium nitride coatings synthesized by IPD method with eliminated current oscillations Cover

Titanium nitride coatings synthesized by IPD method with eliminated current oscillations

Open Access
|Sep 2016

Figures & Tables

Fig. 1

Schematic diagram of the IPD device equipped with diodes bank.
Schematic diagram of the IPD device equipped with diodes bank.

Fig. 2

Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).
Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).

Fig. 3

SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).
SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).

Fig. 4

X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).
X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).

Fig. 5

The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
DOI: https://doi.org/10.1515/msp-2016-0074 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 523 - 528
Submitted on: Sep 1, 2015
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Accepted on: May 31, 2016
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Published on: Sep 8, 2016
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2016 Rafał Chodun, Katarzyna Nowakowska-Langier, Krzysztof Zdunek, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.