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Microstructural, optical and electrical properties of Cl-doped CdTe single crystals Cover

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Open Access
|Sep 2016

Figures & Tables

Fig. 1

Four CdTe ingots used in this study: un-doped, doped with Cl at concentrations of 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3.

Fig. 2

XRD measurement results of 12 samples from four ingots with different Cl doping concentrations, chosen from top, middle and bottom sections, respectively.

Fig. 3

Typical IR microscope images of Te inclusions for three samples with Cl doping concentrations of 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3. The solid lines appearing on the surfaces might be due to the scratches induced by incompletely optimized polishing processes.

Fig. 4

Histogram of Te inclusions size distribution for three Cl-doped CdTe samples.

Fig. 5

(a) Dielectric response curves of undoped and doped (1.99 × 1020 cm−3) CdTe sample, (b) α2vs. photon energy (hν, in eV) with extrapolation of the linear part of the curves to α = 0, (c) second derivative plots of ε1 shown in Fig. 5a.

Fig. 6

(a) Average resistivities of CdTe samples as a function of Cl doping concentrations. Solid fitting line was provided as a guide for the eyes; (b) average resistivities of CdTe samples from different locations within the ingots (Fig. 1). Solid fitting line was provided as a guide for the eyes.

Average resistivities of the CdTe samples with different Cl doping concentrations and different positions within the ingots_ Mean values for each row/column were also calculated and presented in the Table_

Top [Ω·cm]Middle [Ω·cm]Bottom [Ω·cm]Mean [Ω·cm]
Undoped5.20 × 1041.33 × 1041.60 × 1042.71 × 104
Cl doped, 4.97 × 1019cm−33.56 × 1065.70 × 1092.07 × 1092.59 × 109
Cl doped, 9.94 × 1019cm−31.06 × 1098.03 × 1093.35 × 1094.15 × 109
Cl doped, 1.99 × 1020cm−32.19 × 1091.44 × 10102.11 × 1096.22 × 109
Mean [Ω·cm]8.15 × 1087.02 × 1091.88 × 109
DOI: https://doi.org/10.1515/msp-2016-0066 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 487 - 493
Submitted on: Jun 17, 2015
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Accepted on: May 17, 2016
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Published on: Sep 8, 2016
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2016 Hyojeong Choi, Han Soo Kim, Joon-Ho Oh, Dong Jin Kim, Young Soo Kim, Jong-Seo Chai, Jang Ho Ha, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.