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Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells Cover

Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells

Materials Science-Poland
Volume 34 (2016): Issue 1 (March 2016)
By:
Open Access
|Apr 2016

Figures & Tables

Fig 1

Thickness vs. etching time of PS grown at a constant current density of 100 mA ·cm−2 on a polished p+ substrate.
Thickness vs. etching time of PS grown at a constant current density of 100 mA ·cm−2 on a polished p+ substrate.

Fig 2

Cross-section SEM image of Si/PS structure obtained during 1.3 s at current density of 100 mA/cm2 on p+ substrate (a), planar view of the fabricated porous silicon layer (b).
Cross-section SEM image of Si/PS structure obtained during 1.3 s at current density of 100 mA/cm2 on p+ substrate (a), planar view of the fabricated porous silicon layer (b).

Fig 3

Experimental total reflectivity spectra for Si/PS and Si/Al.
Experimental total reflectivity spectra for Si/PS and Si/Al.

Fig 4

Cross-section SEM image of PS/SiNx structure carried out on p+ substrate.
Cross-section SEM image of PS/SiNx structure carried out on p+ substrate.

Fig 5

Experimental total reflectivity spectra for Si/PS and Si/PS/SiNx structures compared to Si/AlBSF contact.
Experimental total reflectivity spectra for Si/PS and Si/PS/SiNx structures compared to Si/AlBSF contact.

Fig 6

Optical model of a cell describing the two internal reflections (RB and RF) and the total measured reflection (RT).
Optical model of a cell describing the two internal reflections (RB and RF) and the total measured reflection (RT).

Fig 7

Internal reflectivity spectra calculated from R Tfor Si/PS, Si/PS/SiNx structures in comparison with the Si/Al reference.
Internal reflectivity spectra calculated from R Tfor Si/PS, Si/PS/SiNx structures in comparison with the Si/Al reference.

Fig 8

Total and internal reflectivity at 1130 nm (a), path-length enhancement factor (b), for Si/PS, Si/PS/SiNx and Si/Al.
Total and internal reflectivity at 1130 nm (a), path-length enhancement factor (b), for Si/PS, Si/PS/SiNx and Si/Al.

Weighted average reflectivity calculated from the measured total reflectivity in the wavelength range between 800 and 1200 nm, for various thicknesses of PS layers_

Weighted Thickness average R [%][nm] Thickness SE[nm] SEM
1.3529679
450334329
748599560
847685660
1044836836
DOI: https://doi.org/10.1515/msp-2016-0054 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 94 - 100
Submitted on: Jun 5, 2015
Accepted on: Dec 18, 2015
Published on: Apr 27, 2016
Published by: Sciendo
In partnership with: Paradigm Publishing Services
Publication frequency: 4 times per year
Keywords:
porous silicon,
light trapping,
SiN,
total reflectivity,
internal reflectivity
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 L. Remache, T. Nychyporuk, N. Guermit, E. Fourmond, A. Mahdjoub, M. Lemiti, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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