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Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

Materials Science-Poland
Volume 34 (2016): Issue 2 (June 2016)
By:
Open Access
|Jun 2016

Figures & Tables

Fig. 1

(a) Single crystalline 1-inch TlBr ingot used in the study, (b) a diced and polished TlBr sample.
(a) Single crystalline 1-inch TlBr ingot used in the study, (b) a diced and polished TlBr sample.

Fig. 2

ICP-MS results of the raw material, and top and bottom samples of TlBr.
ICP-MS results of the raw material, and top and bottom samples of TlBr.

Fig. 3

XRD patterns for the top, middle, and bottom samples of TlBr.
XRD patterns for the top, middle, and bottom samples of TlBr.

Fig. 4

(a) Transmittance and (b) α2 vs. hν curves for the top, middle, and bottom samples of TlBr.
(a) Transmittance and (b) α2 vs. hν curves for the top, middle, and bottom samples of TlBr.

Fig. 5

I-V characteristics and resistivities of the top, middle, and bottom samples of TlBr.
I-V characteristics and resistivities of the top, middle, and bottom samples of TlBr.

Summary of the Al impurity concentrations, FWHM (full width at half-maximum) values from the main peaks in the XRD graphs, optical bandgaps, and resistivities of the three samples used in this study_

TopMiddle Bottom
Al impurity conc. [ppm]0.120.090.47
FWHM [radian]0.2150.1560.223
Optical bandgap [eV]2.792.762.78
Resistivity [×1011 Ω·cm]2.22.52.2

Summary of the major impurities observed in the raw material and in the three samples, which were measured using an ICP-MS_

Unit [ppm]NaCaMgFeAlSiGaKIn
Raw material2.005.000.203.000.502.000.200.100.10
Top0.000.000.010.150.120.000.000.000.00
Middle0.000.000.000.040.090.000.000.000.00
Bottom0.000.000.040.220.470.000.000.000.00
DOI: https://doi.org/10.1515/msp-2016-0034 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 297 - 301
Submitted on: Jun 10, 2015
Accepted on: Jan 13, 2016
Published on: Jun 18, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
semiconductor single crystal,
TlBr,
radiation detection,
crystalline quality,
impurity,
resistivity,
optical bandgap
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Dong Jin Kim, Joon-Ho Oh, Han Soo Kim, Young Soo Kim, Manhee Jeong, Chang Goo Kang, Woo Jin Jo, Hyojeong Choi, Jong Guk Kim, Seung Hee Lee, Jang Ho Ha, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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