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First-principles study of atomic structure and electronic properties of Si and F doped anatase TiO2 Cover

First-principles study of atomic structure and electronic properties of Si and F doped anatase TiO2

Materials Science-Poland
Volume 33 (2015): Issue 3 (September 2015)
By: Hongping Li,  Lin Chen,  Shuai Liu,  Changsheng Li,  Jian Meng and  Zhongchang Wang  
Open Access
|Aug 2016

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DOI: https://doi.org/10.1515/msp-2015-0081 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 549 - 554
Submitted on: Nov 4, 2014
Accepted on: May 19, 2015
Published on: Aug 30, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
anatase TiO2,
Si/F co-doping,
first-principles,
electronic properties
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Hongping Li, Lin Chen, Shuai Liu, Changsheng Li, Jian Meng, Zhongchang Wang, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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