Superdiffusion of Carbon by Vacancies Irradiated with Soft X-Rays in CZ Silicon / Superdifūzija Ar Vakancēm Iestarota Ar Mīkstajiem Rentgenstariem CZ Silīcijā
By: A. J. Janavičius, A. Mekys, R. Purlys, Ž. Norgėla, S. Daugėla and R. Rinkūnas
References
- 1. Vavilov, V.S., Kiv, A.E., and Nijazova, O.R. (1981). Mechanism of Producing and Migration of Defects in Semiconductors. Moscow: Science.
- 2. Purlys, R., Janavičius, A. J., Mekys, A., Balakauskas, S. and Storasta, J. (2001). Electrical conductivity of Si and GaAs monocrystals excited by soft X-rays. Lithuanian Journal of Physics, 41, 376-380.
- 3. Janavičius, A.J., Norgėla, Ž., and Purlys, R. (2005). Nonlinear diffusion in excited Si crystals. Eur. Phys. J. Appl. Phys. 29, 127-131.
- 4. Janavičius, A. J., Storasta, J., Purlys, R., Mekys, A., Balakauskas, S., and Norgėla, Ž. (2007). Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays. Acta Phys. Pol. A, 112, 55-68.
- 5. Janavičius, A. J., Balakauskas, S., Kazlauskienė, V., Mekys A., Purlys, R., and Storasta, J. (2008). Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays. Acta Phys. Pol. A 114, 779-790.
- 6. Lindstrom, J.L., Murin, L.I., Hallberg, T., Markevich, V.P., Svenson, B.G., Kleverman, M., and Hermansson, J. (2002). Defect engineering in Czochralski silicon by electron irradiation at different temperatures. Nuclear Instruments and Methods in Physics Research B, 186, 121-126.
- 7. Londos, C.A., Potsidi, M. S., and Stakakis, E. (2003). Carbon-related complexes in neutron-irradiated silicon. Physica B, 340-342, 551-556.
- 8. Leveant, P., Werner, P., Gerth, G., and Gosele, U. (2002). Diffusion and Agglomeration of Carbon in Silicon. Solid State Phenomena, 82-84, 189-194.
- 9. Lau, W. S. (1999). Infrared Characterization for Microelectronics. New-York: World Scientific Publishing.
- 10. Janavičius, A. J. (1998). Nonlinear many-staged diffusion. Acta Phys. Pol. A, 93, 731-735.
- 11. Janavičius, A. J., Balakauskas, S., and Purlys, R. (2011). Superdiffusion of Phosphorus in p-Si Wafers Irradiated by Soft X-rays. The 13th International Conference - School, Advanced Materials and Technologies, 27-31 August 2011, (p. 129) ISSN 1822 7759, Kaunas: Technology.
- 12. Durand, F., and Duby, J.C. (1999). Carbon solubility in solid and liguid silicon. Journal of Phase Equilibre 20 (1), 61-66.
- 13. Verner, P., Grossman, H. J., Jacobson, D.C., and Gosele, U. (1998). Carbon diffusion in silicon. Appl. Phys. Lett. 73 (17), 2465-2470.
- 14. Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., and Schwingenschlo, U. (2014). Carbon related defects in irradiated silicon revisited. Scientific Reports 4, Article number: 4909, 1-9.
- 15. Lindstrom, J.L., Murin, L.I., Hallberg, T., Markevich, V.P., Svensson, B.G., Kleverman, M., and Hermanson, J. (2002). Defect engineering in Czochralski silicon by electron irradiation at different temperatures. Nuclear Instruments and Methods in Physics Research B 186, 121 -126.
- 16. Janavičius, A J. , Banys, J., Purlys, R., and Balakauskas, S. (2002). The diffusion coefficient of vacancies excited by X-ray in monocrystalline Si. Lithuanian Journal of Physics 42(5), 337-340.
- 17. Lindstrom, J.L., Hallberg, T., Hermanson, J., Murin, L.I., Komarov, B.A., Markevich, V.P., Kleverman, M., and Svensson, B.G. (2001). Interaction between self-interstitials and the oxygen dimer in silicon. Physica B, 308-310, 284-289.
- 18. Karazija, R. (1987). The Theory of X-Ray and Electronic Spectra of Free Atoms. An Introduction. Vilnius: Science (in Russian).
DOI: https://doi.org/10.1515/lpts-2015-0030 | Journal eISSN: 2255-8896 (formerly 0868-8257) | Journal ISSN: 0868-8257
Language: English
Page range: 68 - 75
Published on: Nov 26, 2015
Published by: Institute of Physical Energetics
In partnership with: Paradigm Publishing Services
Keywords:
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© 2015 A. J. Janavičius, A. Mekys, R. Purlys, Ž. Norgėla, S. Daugėla, R. Rinkūnas, published by Institute of Physical Energetics
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.