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A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology Cover

A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology

Journal of Electrical Engineering
Volume 68 (2017): Issue 6 (November 2017)
By: Oktay Aytar,  Ali Tangel and  Engin Afacan  
Open Access
|Jan 2018

Authors

Oktay Aytar

oaytar@ibu.edu.tr

Department of Electrical and Electronics Engineering, Abant Izzet Baysal University, Golkoy Campus, Bolu, Turkey

Ali Tangel

atangel@kocaeli.edu.tr

Department of Electronics and Communications Engineering, Kocaeli University, Umuttepe Campus

Engin Afacan

engin.afacan@kocaeli.edu.tr

Department of Electronics and Communications Engineering, Kocaeli University, Umuttepe Campus
DOI: https://doi.org/10.1515/jee-2017-0076 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 415 - 424
Submitted on: Oct 26, 2017
Published on: Jan 19, 2018
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
analog-to-digital converters,
CMOS ADC,
time interleaved ADC,
flash ADC
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2018 Oktay Aytar, Ali Tangel, Engin Afacan, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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