High conversion efficiency of crystalline Si solar cells using black − Si fabricated by SSCT method

Kentaro Imamura; Yuya Onitsuka; Yuya Sakae; Hikaru Kobayashi

doi:10.1515/jee-2017-0053

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High conversion efficiency of crystalline Si solar cells using black − Si fabricated by SSCT method

Journal of Electrical Engineering

Volume 68 (2017): Issue 7 (December 2017)

By: Kentaro Imamura, Yuya Onitsuka, Yuya Sakae and Hikaru Kobayashi

Open Access

|Dec 2017

Abstract

We have developed a technology for fabrication of black − Si by use of the surface structure chemical transfer (SSCT) method. The ultralow reflectance below 3% results from formation of a graded porosity structure of a nanocrystalline Si layer formed by the SSCT method. The nanocrystalline Si layer with an extremely large surface area is effectively passivated by deposition of phosphosilicate glass (PSG) followed by heat treatment at 925 ◦C. After PSG passivation, the minority carrier lifetime greatly increases, and the internal quantum efficiency in the short wavelength region is also greatly increased. Using the SSCT method and the PSG passivation method, the high conversion efficiency of 19.7% is achieved.

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Articles in this issue

DOI: https://doi.org/10.1515/jee-2017-0053 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

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Language: English

Page range: 37 - 42

Submitted on: Apr 23, 2017

Published on: Dec 29, 2017

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

surface structure chemical transfer,

phosphosilicate glass

Related subjects:

Engineering,

Introductions and overviews,

Engineering, other

© 2017 Kentaro Imamura, Yuya Onitsuka, Yuya Sakae, Hikaru Kobayashi, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 68 (2017): Issue 7 (December 2017)