A hierarchy of hydrodynamic models for silicon carbide semiconductors

Orazio Muscato; Vincenza Di Stefano

doi:10.1515/caim-2017-0013

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A hierarchy of hydrodynamic models for silicon carbide semiconductors

Communications in Applied and Industrial Mathematics

Volume 8 (2017): Issue 1 (March 2017)

By: Orazio Muscato and Vincenza Di Stefano

Open Access

|Dec 2017

Abstract

The electro-thermal transport in silicon carbide semiconductors can be described by an extended hydrodynamic model, obtained by taking moments from kinetic equations, and using the Maximum Entropy Principle. By performing appropriate scaling, one can obtain reduced transport models such as the Energy transport and the drift-diffusion ones, where the transport coefficients are explicitly determined.

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Articles in this issue

DOI: https://doi.org/10.1515/caim-2017-0013 | Journal eISSN: 2038-0909

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Language: English

Page range: 251 - 264

Submitted on: Dec 14, 2016

Accepted on: Oct 12, 2017

Published on: Dec 22, 2017

Published by: Italian Society for Applied and Industrial Mathemathics

In partnership with: Paradigm Publishing Services

Publication frequency: 1 issue per year

Keywords:

Semiconductors,

Kinetic theory,

Irreversible thermodynamics

Related subjects:

Mathematics,

Numerical and computational mathematics,

Applied mathematics

© 2017 Orazio Muscato, Vincenza Di Stefano, published by Italian Society for Applied and Industrial Mathemathics
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 8 (2017): Issue 1 (March 2017)